丝印：110；Package：PowerFLAT；N-channel 100 V, 5 mΩ typ., 107 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 dual side cooling package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench g

文件：1.94379 Mbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：319.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced SGT technology

文件：1.59976 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-channel 100 V, 5.1 m廓 typ., 110 A, STripFET??VII DeepGATE?? Power MOSFETs in TO-220FP and TO-220 packages

文件：1.23098 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体