MOSFET - Power, Single N-Channel, Shielded Gate, PowerTrench 120 V, 50.6 m, 4.5 A

Features • Shielded Gate MOSFET Technology • 50 Lower Qrr than Other MOSFET Suppliers • Lowers Switching Noise/EMI • Low Profile − 0.5 mm in MicroFET 2x2 mm • 100 UIL Tested • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Primary DC−DC MOSFET • Synchronous Rect

文件：201.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5L；Package：UDFN6；MOSFET - Power, Single N-Channel, Shielded Gate, PowerTrench 120 V, 50.6 m, 4.5 A

Features • Shielded Gate MOSFET Technology • 50 Lower Qrr than Other MOSFET Suppliers • Lowers Switching Noise/EMI • Low Profile − 0.5 mm in MicroFET 2x2 mm • 100 UIL Tested • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Primary DC−DC MOSFET • Synchronous Rect

文件：201.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single, N-Channel, Shielded Gate, PowerTrench®, 120 V, 50.6 mΩ, 4.5 A

This N Channel MV MOSFET is produced using an advanced PowerTrench process that incorporatesShielded Gate Technology. This process has been optimized to minimize ON-State resistance and yet maintain superior switching performance with best in class body diode. • Lowers Switching noise/EMI\n• Lowers Switching noise/EMI\n• 50% lower Qrr than other MOSFET Suppliers\n• 50% lower Qrr than other MOSFET Suppliers\n• Low Profile 0.5mmMax. in MicroFET 2x2mm\n• Low Profile 0.5mmMax. in MicroFET 2x2mm\n• 100% UIL Tested\n• 100% UIL Tested\n• These De;

ONSEMI

安森美半导体

LQFP48

STM32F030C8T6

上传：深圳市瑞卓芯科技有限公司

ST

上传：深圳市云中傲科技有限公司