N-channel 30 V, 0.0011 廓, 35 A PowerFLAT??5x6 STripFET??VI DeepGATE??Power MOSFET

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance

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STMICROELECTRONICS

意法半导体

N-channel 30 V, 0.0011 Ohm typ., 45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on)in all packages.\n • Very low on-resistance\n• Very low switching gate charge• High avalanche ruggedness\n• Low gate drive power loss;

ST

意法半导体

ST
QFN

ST

上传：深圳市向鸿伟业电子有限公司

STM
DFN5X6

STM

信盛

上传：深圳市金芯世纪电子有限公司

ST
DFN5X6

ST

上传：深圳诚思涵科技有限公司