N沟道600 V、0.389 Ohm典型值、7 A MDmesh M2 EP功率MOSFET，PowerFLAT 5x6 HV封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it su • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• Very low turn-off switching losses \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

N-channel 600 V, 0.389 廓 typ., 7 A MDmesh??M2 EP Power MOSFET in a PowerFLAT??5x6 HV package

文件：488.18 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.340 廓 typ., 11 A MDmesh??M2 EP Power MOSFET in a TO-220 package

文件：518.22 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：501.71 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：502.49 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：502.49 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体