STL117N4LF7AG中文资料汽车级N沟道40 V、8 mOhm典型值、15 A STripFET F7功率MOSFET，PowerFLAT 5x6封装数据手册ST规格书

描述 Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

特性 Features

• AEC-Q101 qualified
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
• Wettable flank package