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首页>STGWT40V60DLF>芯片详情
STGWT40V60DLF_STMICROELECTRONICS/意法半导体_IGBT 晶体管 600V 40A High Speed Trench Gate IGBT宏捷佳二部
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产品属性
- 类型
描述
- 型号:
STGWT40V60DLF
- 功能描述:
IGBT 晶体管 600V 40A High Speed Trench Gate IGBT
- RoHS:
否
- 制造商:
STMicroelectronics
- 配置:
Single 集电极—发射极最大电压
- VCEO:
600 V
- 集电极—射极饱和电压:
2.35 V
- 栅极/发射极最大电压:
+/- 20 V 在25
- C的连续集电极电流:
80 A
- 栅极—射极漏泄电流:
250 nA
- 功率耗散:
283 W
- 最大工作温度:
+ 175 C
- 封装/箱体:
TO-3P
- 封装:
Tube
供应商
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