N-channel 600 V, 7 A very fast IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switch Low on voltage drop (V\ncesat)\nVery soft ultra fast recovery antiparallel diode\nLow C\nRES/ C\nIESratio (no cross-conduction susceptibility)\nHigh frequency operation;

ST

意法半导体

N沟道600 V、7 A超快IGBT

This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. • Low on-voltage drop (VCE(sat)) \n• Low CRES / CIES ratio (no cross-conduction susceptibility) \n• Very soft ultra fast recovery antiparallel diode \n• High frequency operation;

ST

意法半导体

Package：TO-251-3 短引线，IPak，TO-251AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT N-CH 600V 7A IPAK

STMICROELECTRONICS

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 15A 56W DPAK

STMICROELECTRONICS

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 15A 56W DPAK

STMICROELECTRONICS

意法半导体