STGB10NC60HD_V01中文资料意法半导体数据手册PDF规格书

描述 Description

This IGBT utilizes the advanced PowerMESH™

process resulting in an excellent trade-off

between switching performance and low on-state

behavior.

特性 Features

■ Low on-voltage drop (VCE(sat))

■ Low CRES / CIES ratio (no cross-conduction

susceptibility)

■ Very soft ultra fast recovery antiparallel diode

Applications

■ High frequency motor controls

■ SMPS and PFC in both hard switch and

resonant topologies

■ Motor drivers