丝印：STF；Package：U-DFN3030-8；4A SBR SUPER BARRIER RECTIFER

Features Ultra Low Forward Voltage Drop Superior Reverse Avalanche Capability Patented Super Barrier Rectifier (SBR ® ) Technology Soft, Fast Switching Capability +150ºC Operating Junction Temperature Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green

文件：315.15 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：STFB；Package：SOT-23-THIN；LM284x SIMPLE SWITCHER® 4.5-V to 42-V Input, 0.1-, 0.3-, or 0.6-A Output Step-Down DC/DC Regulator in Thin SOT

1 Features 1• Input voltage 4.5 V to 42 V • Output current options of 100 mA, 300 mA, and 600 mA • Feedback pin voltage of 0.765 V • 550-kHz (X) or 1.25-MHz (Y) switching frequency • Low shutdown IQ: 16-μA typical • Short-circuit protected • Internally compensated • Soft-start circuitry

文件：765.4 Kbytes 页数：28 Pages

TI

德州仪器

丝印：STFB；Package：SOT-23-THIN；LM284x SIMPLE SWITCHER® 4.5-V to 42-V Input, 0.1-, 0.3-, or 0.6-A Output Step-Down DC/DC Regulator in Thin SOT

1 Features 1• Input voltage 4.5 V to 42 V • Output current options of 100 mA, 300 mA, and 600 mA • Feedback pin voltage of 0.765 V • 550-kHz (X) or 1.25-MHz (Y) switching frequency • Low shutdown IQ: 16-μA typical • Short-circuit protected • Internally compensated • Soft-start circuitry

文件：765.4 Kbytes 页数：28 Pages

TI

德州仪器

丝印：STFB；Package：SOT-23-THIN；LM284x SIMPLE SWITCHER® 4.5-V to 42-V Input, 0.1-, 0.3-, or 0.6-A Output Step-Down DC/DC Regulator in Thin SOT

1 Features 1• Input voltage 4.5 V to 42 V • Output current options of 100 mA, 300 mA, and 600 mA • Feedback pin voltage of 0.765 V • 550-kHz (X) or 1.25-MHz (Y) switching frequency • Low shutdown IQ: 16-μA typical • Short-circuit protected • Internally compensated • Soft-start circuitry

文件：765.4 Kbytes 页数：28 Pages

TI

德州仪器

丝印：STFB；Package：SOT-23-THIN；LM284x SIMPLE SWITCHER® 4.5-V to 42-V Input, 0.1-, 0.3-, or 0.6-A Output Step-Down DC/DC Regulator in Thin SOT

1 Features 1• Input voltage 4.5 V to 42 V • Output current options of 100 mA, 300 mA, and 600 mA • Feedback pin voltage of 0.765 V • 550-kHz (X) or 1.25-MHz (Y) switching frequency • Low shutdown IQ: 16-μA typical • Short-circuit protected • Internally compensated • Soft-start circuitry

文件：765.4 Kbytes 页数：28 Pages

TI

德州仪器

丝印：100N10F7；Package：TO-220FP；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

文件：652.33 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

丝印：100N6F7；Package：TO-220FP；N-channel 60 V, 4.6 m??typ., 46 A STripFET??F7 Power MOSFET in a TO-220FP package

文件：419.46 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：10LN80K5；Package：TO-220FP；N-channel 800 V, 0.55 廓 typ., 8 A MDmesh??K5 Power MOSFET in a TO-220FP package

文件：714.63 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Three PhaseNeutral Filters For Solar Technology Applications

Three Phase + Neutral Filters Single stage Solar technoloty applications Compact model for saving space Low leakage current

文件：182.31 Kbytes 页数：2 Pages

PREMO

普莱默

N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件：607.96 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体