N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET

■ TYPICAL RDS(on) = 5.5 mΩ ■ 100 AVALANCHE TESTED ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD INDUSTRIAL APPLICATIONS: ■ SMPS & UPS ■ MOTOR CONTROL ■ WELDING EQUIPMENT ■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS

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STMICROELECTRONICS

意法半导体

N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET

ST

意法半导体

HiPerFET-TM Power MOSFET

HiPerFET Power MOSFET Single Die MOSFET Features • Conforms to SOT-227B outline • Encapsulating epoxy meets UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance •

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IXYS

艾赛斯

HiPerFET Power MOSFET Single MOSFET Die

HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Package • miniBLOC, with Aluminium Nitride Isolation • Dynamic dv/dt Rating • Avalanche Rated • Fast Intrinsic Rectifier • Low RDS(on) • Low Drain-to-Tab Capacitan

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HiPerFET Power MOSFETs ISOPLUS247

VDSS = 100 V ID25 = 165 A RDS(on)= 8 m
Ω trr ≤ 250 ns Single MOSFET Die Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(

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IXYS

艾赛斯