N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET

■ TYPICAL RDS(on) = 5.5 mΩ ■ 100 AVALANCHE TESTED ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD INDUSTRIAL APPLICATIONS: ■ SMPS & UPS ■ MOTOR CONTROL ■ WELDING EQUIPMENT ■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS

文件：85.1 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET

ST

意法半导体

N-Channel Power MOSFET

文件：595.58 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：299.61 Kbytes 页数：10 Pages

INFINEON

英飞凌

N-Channel Enhancement Mode Power Mosfet

文件：3.98832 Mbytes 页数：7 Pages

FOSTER

福斯特半导体