N-Channel MOSFET

DESCRIPTION ·Drain Current -ID= 180A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V APPLICATIONS ·Switching application

文件：562.26 Kbytes 页数：3 Pages

ISC

无锡固电

N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET] POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：89.24 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-channel 100V - 4.5m廓 - 180A - ISOTOP STripFET??Power MOSFET

文件：247.38 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET™ Power MOSFET

ST

意法半导体

N-channel 100V - 4.5m廓 - 180A - ISOTOP STripFET??Power MOSFET

文件：247.38 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体