SuperTan® Wet Tantalum Capacitors With Hermetic Seal, Extended Range

FEATURES Vishay SuperTan® Extended (STE) represents a major breakthrough in wet tantalum capacitor technology. Its unique cathode system, also used in the ST, provides the highest capacitance per unit volume available. The STE combines the inherent reliability of wet tantalum with the capaci

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VishayVishay Siliconix

威世科技

SuperTan® Wet Tantalum Capacitors With Hermetic Seal, Extended Range

FEATURES Vishay SuperTan® Extended (STE) represents a major breakthrough in wet tantalum capacitor technology. Its unique cathode system, also used in the ST, provides the highest capacitance per unit volume available. The STE combines the inherent reliability of wet tantalum with the capaci

文件：128.44 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世科技

SuperTan® Wet Tantalum Capacitors With Hermetic Seal, Extended Range

FEATURES Vishay SuperTan® Extended (STE) represents a major breakthrough in wet tantalum capacitor technology. Its unique cathode system, also used in the ST, provides the highest capacitance per unit volume available. The STE combines the inherent reliability of wet tantalum with the capaci

文件：128.44 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世科技

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：93.81 Kbytes 页数：6 Pages

Samhop

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：93.87 Kbytes 页数：6 Pages

Samhop

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：94.25 Kbytes 页数：6 Pages

Samhop

三合微科

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE ■ HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ EASY TO MOUNT ■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS ■ EXTREMELY LOW Rth JUNCT

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STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE ■ HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ EASY TO MOUNT ■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS ■ EXTREMELY LOW Rth JUNCTION TO CASE ■ VERY LOW

文件：160.45 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY (SEE STH12N60 FOR RATING) ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ EASY TO MOUNT ■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS ■ EXTREMELY LOW Rth JUNCTION TO CASE ■ VERY LOW DRAIN TO CASE CAPACITANCE ■ VERY LOW INT

文件：263.91 Kbytes 页数：8 Pages

STMICROELECTRONICS

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N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

文件：280.94 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体