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AEAT-601B

IncrementalMagneticEncoderContactlesssensingtechnology

AVAGOAvago

安华高安华高科技

AIZ-601

AIZSeriesPassive10-TapDIP/SMDDelayModules

RHOMBUS-IND

Rhombus Industries Inc.

AMZ-601

AMZ&AMYSeriesPassive5-TapDIP/SMDDelayModules

RHOMBUS-IND

Rhombus Industries Inc.

AN_GPS_A601

GPSActiveAntennasemispherescrewmount

MASWELLSuzhou Maswell Communication Technology Co. Ltd

迈斯维苏州迈斯维通信技术有限公司

AN_GPS_A601

GPSActiveAntennaSemisphereScrewMountGT5

MASWELLSuzhou Maswell Communication Technology Co. Ltd

迈斯维苏州迈斯维通信技术有限公司

AN601

UnclampedInductiveSwitchingRuggedMOSFETsForRuggedEnvironments

UnclampedInductiveSwitchingRuggedMOSFETsForRuggedEnvironments TheevolutionofthepowerMOSFEThasresultedinaveryruggedtransistor.Thesemiconductorindustrydefinesthisruggednessasthecapabilitytowithstandavalanchecurrentswhensubjectedtounclampedinductiveswitching.Hi

VishayVishay Siliconix

威世科技威世科技半导体

AOP601

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAOP601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.ASchottkydiodeinparallelwiththen-channelFETreducesbodydioderelatedlo

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOP601L

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAOP601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.ASchottkydiodeinparallelwiththen-channelFETreducesbodydioderelatedlo

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AP601

HighDynamicRange1.8W28VHBTAmplifier

ProductDescription TheAP601isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhas13.5dBgain,whilebeingabletoachievehighperformancefor800-2400MHzapplicationswithupto+32.5dBmofcompressed1dBpower.

WJCIWJ Communication. Inc.

WJ Communication. Inc.

AP601-F

HighDynamicRange1.8W28VHBTAmplifier

ProductDescription TheAP601isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhas13.5dBgain,whilebeingabletoachievehighperformancefor800-2400MHzapplicationswithupto+32.5dBmofcompressed1dBpower.

WJCIWJ Communication. Inc.

WJ Communication. Inc.

ASSR-601J

1500VHighVoltage,1FormA,SolidStateRelay(MOSFET)

BOARDCOMBroadcom Corporation.

博通公司博通半导体

ASSR-601JT

AutomotiveSolidStateRelaywithR2CouplerTMIsolation

BOARDCOMBroadcom Corporation.

博通公司博通半导体

ASSR-601JV

AutomotiveSolidStateRelaywithR2CouplerTMIsolation

BOARDCOMBroadcom Corporation.

博通公司博通半导体

ASX601

250~2500MHzMMICAmplifier

ASB

Advanced Semiconductor Business Inc.

ASX601

250-2500MHzMMICAmplifier

Description TheASX601,apoweramplifierMMIC,hasahighlinearity,highgain,andhighefficiencyoverawiderangeoffrequency,beingsuitableforuseinbothreceiverandtransmitteroftelecommunicationsystemsupto2.5GHz.TheamplifierisavailableinaSOT89packageandpassesthrough

ASB

Advanced Semiconductor Business Inc.

ATS601

SingleElement,ToothDetectingSpeedSensorIC

Allegro

Allegro MicroSystems

ATS601LSG

Digitaloutputrepresentingtargetprofile

Allegro

Allegro MicroSystems

AVR601

AtmelModularEvaluationKitsforMotorControlApplications

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

B601

PNPSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION)FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING

PNPSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING FEATURES •High-DCcurrentgainduetoDarlingtonconnection •Lowcollectorsaturationvoltage •Lowcollectorcutoffcurrent •IdealforuseindirectdrivefromICoutputfo

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

B601Y

LowFrequencyPowerAmplifier

LowFrequencyPowerAmplifier •MediumSpeedSwitchingIndustrialUse •ComplementtoKSD560

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

产品属性

  • 产品编号:

    STDRIVE601TR

  • 制造商:

    STMicroelectronics

  • 类别:

    集成电路(IC) > 全半桥驱动器

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 输出配置:

    半桥(3)

  • 应用:

    DC 电机,通用

  • 接口:

    模拟,逻辑

  • 负载类型:

    容性和阻性

  • 技术:

    功率 MOSFET,IGBT

  • 导通电阻(典型值):

    35 欧姆

  • 电流 - 峰值输出:

    350mA

  • 电压 - 供电:

    9V ~ 20V

  • 电压 - 负载:

    580V

  • 工作温度:

    -40°C ~ 125°C(TJ)

  • 特性:

    自举电路

  • 故障保护:

    过流,超温,UVLO

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    28-SOIC(0.295",7.50mm 宽)

  • 供应商器件封装:

    28-SO

  • 描述:

    TRIPLE HALF-BRIDGE HIGH-VOLTAGE

供应商型号品牌批号封装库存备注价格
STMicroelectronics
24+
28-SOIC(0.295,7.50mm 宽)
25236
意法电源管理芯片-原装正品
询价
ST/意法
22+
SOP28
10000
原装正品
询价
ST
23+
NA
5070
全新原装,价格优势,原厂原包
询价
ST
23+
SOP28
700000
公主请下单 柒号只做原装
询价
ST
22+
30000
原装现货,可追溯原厂渠道
询价
ST(意法半导体)
23+
SO-28
3022
深耕行业12年,可提供技术支持。
询价
STMicroelectronics
2021+
SOIC
57500
科研单位合格供应商!现货库存
询价
ST/意法半导体
21+
SO-28
8800
公司只做原装正品
询价
STMicroelectronics
21+
28-SOIC(0.295,7.50mm 宽)
2500
正规渠道/品质保证/原装正品现货
询价
意法半导体
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
更多STDRIVE601TR供应商 更新时间2024-6-12 17:07:00