N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

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STMICROELECTRONICS

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丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：324.58 Kbytes 页数：2 Pages

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无锡固电

N沟道600 V、0.63 Ohm、6.5 A MDmesh(TM) II功率MOSFET，DPAK封装

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件：902.56 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：310.61 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh™Power MOSFET

TYPICAL RDS(on) = 0.55 Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that a

文件：181.51 Kbytes 页数：9 Pages

STMICROELECTRONICS

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