STD9NM60N

N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STD9NM60N

isc N-Channel MOSFET Transistor

9NM60

9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera

9NM60G-TND-R

9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera

9NM60L-TND-R

9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera

9NM60N

N-Channel650V(D-S)PowerMOSFET

STD9NM60

N-CHANNEL600V-0.55Ω-8.3ATO-220/DPAK/IPAKMDmesh™PowerMOSFET

TYPICALRDS(on)=0.55Ω
HIGHdv/dtANDAVALANCHECAPABILITIES
IMPROVEDESDCAPABILITY
LOWINPUTCAPACITANCEANDGATE CHARGE
LOWGATEINPUTRESISTANCE
TIGHTPROCESSCONTROLANDHIGH MANUFACTORINGYIELDS DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFET technologythata

STF9NM60N

iscN-ChannelMOSFETTransistor

STF9NM60N

N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET

Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STP9NM60

N-CHANNEL600V-0.55Ω-8.3ATO-220/DPAK/IPAKMDmesh™PowerMOSFET

TYPICALRDS(on)=0.55Ω
HIGHdv/dtANDAVALANCHECAPABILITIES
IMPROVEDESDCAPABILITY
LOWINPUTCAPACITANCEANDGATE CHARGE
LOWGATEINPUTRESISTANCE
TIGHTPROCESSCONTROLANDHIGH MANUFACTORINGYIELDS DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFET technologythata

STP9NM60N

N-Channel650V(D-S)PowerMOSFET

STP9NM60N

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=6.5A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.745Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switching

STP9NM60N

N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET

Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo