TLP830F

InfraredLEDPhototransistor

TPS830

SiMonolithicPhoto−IC

Lead(Pb)-Free High−SpeedOpticalRemoteControllers WirelessMouse,Wirelesskeyboard IRDataCommunications •Photodiode,I−Vconverter,band−passfilterandAGCamplifierallincorporatedinasinglechip •Carrierfrequency:fo=455kHz(typ.) •Supplyvoltage:VCC=5V •Visiblelightc

TPS830

SiMONOLITHICPHOTO-IC

Lead(Pb)-Free High−SpeedOpticalRemoteControllers WirelessMouse,Wirelesskeyboard IRDataCommunications •Photodiode,I−Vconverter,band−passfilterandAGCamplifierallincorporatedinasinglechip •Carrierfrequency:fo=455kHz(typ.) •Supplyvoltage:VCC=5V •Visiblelightc

TPS830F

SiMonolithicPhoto−IC

Lead(Pb)-Free High−SpeedOpticalRemoteControllers WirelessMouse,Wirelesskeyboard IRDataCommunications •Photodiode,I−Vconverter,band−passfilterandAGCamplifierallincorporatedinasinglechip •Carrierfrequency:fo=455kHz(typ.) •Supplyvoltage:VCC=5V •Visiblelightc

TSF830M

N-ChannelMOSFETusesadvancedtrenchtechnology

TVCO-830

SMDVOLTAGECONTROLLEDOSCILLATOR(12.8X12.8X4.0MM)

FEATURES WIDEFREQUENCYRANGEVCO LOWPHASENOISE FASTDELIVERY/LOWCOST CUSTOMFREQUENCYRANGEAVAILABLE-CONTACTSALES@TRANSKO.COM

UF830

ULTRAFASTRECOVERYRECTIFIER

UltraFastRecoveryRectifiers •UltraFastRecoveryRectifier •175°CJunctionTemperature •VRRM300TO500Volts •8Ampscurrentrating •tRR50nsecmaximum

UF830

4.5A,500V,1.5廓,N-CHANNELPOWERMOSFET

DESCRIPTION TheN-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. FEATURES *RDS(ON)=1.5Ω *SinglePulseAvalancheEnergyRated

UF830-E

N-CHANNELPOWERMOSFET

UF830-F

N-CHANNELJFETFORELECTRETCONDENSERMICROPHONE