4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET

The N-Channel enhancement mode silicon gate power MOSFETis designed for high voltage, high speed power switchingapplications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers. • RDS(ON)<1.5Ω @ VGS=10V\n• Rugged- SOA is Power Dissipation Limited\n• Linear Transfer Characteristics\n• High Input Impedance;

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N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

文件：264.55 Kbytes 页数：6 Pages

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N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

文件：264.55 Kbytes 页数：6 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件：321.09 Kbytes 页数：9 Pages

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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

文件：256.74 Kbytes 页数：6 Pages

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