ULTRA FAST RECOVERY RECTIFIER

Ultra Fast Recovery Rectifiers • Ultra Fast Recovery Rectifier • 175°C Junction Temperature • VRRM 300 TO 500 Volts • 8 Amps current rating • tRR 50 nsec maximum

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美高森美

4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET

DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated

文件：307.6 Kbytes 页数：8 Pages

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4.5A, 500V, 1.5Ω, N-CHANNEL  POWER MOSFET

The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. • 4.5A, 500V, RDS(ON)=1.5Ω \n• Single Pulse Avalanche Energy Rated \n• Rugged- SOA is Power Dissipation Limited \n• Fast Switching Speeds \n• Linear Transfer Characteristics \n• High Input Impedance;

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4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET

DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated

文件：307.6 Kbytes 页数：8 Pages

UTC

友顺

4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET

DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated

文件：307.6 Kbytes 页数：8 Pages

UTC

友顺

4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET

DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated

文件：307.6 Kbytes 页数：8 Pages

UTC

友顺

4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET

DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated

文件：307.6 Kbytes 页数：8 Pages

UTC

友顺

4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET

DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated

文件：307.6 Kbytes 页数：8 Pages

UTC

友顺

4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET

DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated

文件：307.6 Kbytes 页数：8 Pages

UTC

友顺

4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET

DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated

文件：307.6 Kbytes 页数：8 Pages

UTC

友顺