首页 >STD5N62K3MOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel620V,1.28ohm,4.2ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3™PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH™technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel620V,1.28ohm,4.2ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3™PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH™technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel620V,1.28ohm,4.2ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3™PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH™technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel620V,1.28ohm,4.2ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3™PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH™technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.2A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel620V,1.28ohm,4.2ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3™PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH™technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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