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STD2NB60T4中文资料意法半导体数据手册PDF规格书
STD2NB60T4规格书详情
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
FEATURES SUMMARY
■ TYPICAL RDS(on) = 3.3 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100 AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
产品属性
- 型号：
STD2NB60T4
- 功能描述：
MOSFET N-Ch 600 Volt 2 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO-251/252 |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
VBSEMI/台湾微碧 |
24+ |
TO-252 |
60000 |
全新原装现货 |
询价 | ||
ST |
24+ |
原厂封装 |
2235 |
原装现货假一罚十 |
询价 | ||
ST |
24+ |
TO-252 |
7600 |
新进库存/原装 |
询价 | ||
ST/意法 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST |
24+ |
TO-252 |
27500 |
原装正品,价格最低! |
询价 | ||
ST/意法 |
23+ |
TO-252 |
548 |
询价 | |||
ST/意法 |
21+ |
TO-252 |
16800 |
只做原装,质量保证 |
询价 | ||
ST |
25+ |
TO-252 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 | ||
VBsemi(台湾微碧) |
2447 |
TO-252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 |
