Circuit Protection Solutions Low Voltage Fuse Links Catalogue

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COOPER

NPN Silicon Transistor

Description • Medium power amplifier application Features • PC(Collector dissipation)=2W(Ceramic substate of 40×40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132

文件：81.74 Kbytes 页数：3 Pages

AUK

NPN Silicon Transistor

Description • Medium power amplifier application Features • PC(Collector power dissipation)=1W (Ceramic substate of 250 ㎟ ×0.8t used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132

文件：307.72 Kbytes 页数：5 Pages

KODENSHI

可天士

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.28Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.79 Kbytes 页数：2 Pages

ISC

无锡固电

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficienc

文件：958.22 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.260 Ω typ., 12 A MDmesh M6 Power MOSFET in a DPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：339.42 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

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STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.07ohm - 16A DPAK/IPAK STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”STripFET™ strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufa

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STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man

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STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.07 ohm - 16A - TO-251 STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：55.64 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体