STB9NK60Z中文资料N沟道600 V、0.85 Ohm典型值、7 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，D2PAK封装数据手册ST规格书
STB9NK60Z规格书详情
描述 Description
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
特性 Features
• Extremely high dv/dt capability
• Improved ESD capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitances
技术参数
- 制造商编号
：STB9NK60Z
- 生产厂家
：ST
- Package
：D2PAK
- Grade
：Industrial
- VDSS(V)
：600
- RDS(on)_max(@ VGS=10V)(Ω)
：0.95
- Drain Current (Dc)_max(A)
：7
- PTOT_max(W)
：125
- Qg_typ(nC)
：38
- Reverse Recovery Time_typ(ns)
：480
- Peak Reverse Current_nom(A)
：14.5
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3350 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST(意法半导体) |
24+ |
D2PAK |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
STM |
24+/25+ |
D2PAK(TO-263) |
10000 |
原装正品现货库存价优 |
询价 | ||
ST |
20+ |
TO-263 |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST |
1530+ |
TO-262 |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法 |
24+ |
D2PAK |
3800 |
大批量供应优势库存热卖 |
询价 | ||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
ST |
23+ |
TO-262 |
8000 |
专做原装正品,假一罚百! |
询价 | ||
ST |
23+ |
TO-263 |
8795 |
询价 | |||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
原装现货,实单价优 |
询价 |
