N-CHANNEL 24V - 0.0085 ohm - 60A D짼PAK STripFET??III POWER MOSFET

DESCRIPTION The STB60NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. I ■ TYPICAL RDS(on) = 0.0085 Ω @ 10 V ■ TYPICAL RDS(on) = 0.012 Ω @ 5 V ■

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N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET

■ TYPICAL RDS(on) = 0.0085 Ω @ 10 V ■ TYPICAL RDS(on) = 0.012 Ω @ 5 V ■ RDS(ON) * Qg INDUSTRY’s BENCHMARK ■ CONDUCTION LOSSES REDUCED ■ SWITCHING LOSSES REDUCED ■ LOW THRESHOLD DEVICE ■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) DES

文件：579.88 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET

■ TYPICAL RDS(on) = 0.0085 Ω @ 10 V ■ TYPICAL RDS(on) = 0.012 Ω @ 5 V ■ RDS(ON) * Qg INDUSTRY’s BENCHMARK ■ CONDUCTION LOSSES REDUCED ■ SWITCHING LOSSES REDUCED ■ LOW THRESHOLD DEVICE ■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) DES

文件：579.88 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：B60NH02L；Package：TO-263；N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET

■ TYPICAL RDS(on) = 0.0085 Ω @ 10 V ■ TYPICAL RDS(on) = 0.012 Ω @ 5 V ■ RDS(ON) * Qg INDUSTRY’s BENCHMARK ■ CONDUCTION LOSSES REDUCED ■ SWITCHING LOSSES REDUCED ■ LOW THRESHOLD DEVICE ■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) DES

文件：579.88 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 24V - 0.0085 ohm - 60A D²PAK STripFET™ III POWER MOSFET

ST

意法半导体