STB60NH02L

N-CHANNEL 24V - 0.0085 ohm - 60A D짼PAK STripFET??III POWER MOSFET

DESCRIPTION TheSTB60NH02LutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved.I ■TYPICALRDS(on)=0.0085Ω@10V ■TYPICALRDS(on)=0.012Ω@5V ■

STB60NH02L

N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET

■TYPICALRDS(on)=0.0085Ω@10V ■TYPICALRDS(on)=0.012Ω@5V ■RDS(ON)*QgINDUSTRY’sBENCHMARK ■CONDUCTIONLOSSESREDUCED ■SWITCHINGLOSSESREDUCED ■LOWTHRESHOLDDEVICE ■SURFACE-MOUNTINGD2PAK(TO-263) POWERPACKAGEINTUBE(NOSUFFIX)OR INTAPE&REEL(SUFFIX“T4”) DES

STB60NH02L_04

N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET

■TYPICALRDS(on)=0.0085Ω@10V ■TYPICALRDS(on)=0.012Ω@5V ■RDS(ON)*QgINDUSTRY’sBENCHMARK ■CONDUCTIONLOSSESREDUCED ■SWITCHINGLOSSESREDUCED ■LOWTHRESHOLDDEVICE ■SURFACE-MOUNTINGD2PAK(TO-263) POWERPACKAGEINTUBE(NOSUFFIX)OR INTAPE&REEL(SUFFIX“T4”) DES

STB60NH02LT4

Marking：B60NH02L；Package：TO-263；N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET

■TYPICALRDS(on)=0.0085Ω@10V ■TYPICALRDS(on)=0.012Ω@5V ■RDS(ON)*QgINDUSTRY’sBENCHMARK ■CONDUCTIONLOSSESREDUCED ■SWITCHINGLOSSESREDUCED ■LOWTHRESHOLDDEVICE ■SURFACE-MOUNTINGD2PAK(TO-263) POWERPACKAGEINTUBE(NOSUFFIX)OR INTAPE&REEL(SUFFIX“T4”) DES

B60NH02L

N-CHANNEL24V-0.0085ohm-60AD2PAKSTripFETTMIIIPOWERMOSFET

■TYPICALRDS(on)=0.0085Ω@10V ■TYPICALRDS(on)=0.012Ω@5V ■RDS(ON)*QgINDUSTRY’sBENCHMARK ■CONDUCTIONLOSSESREDUCED ■SWITCHINGLOSSESREDUCED ■LOWTHRESHOLDDEVICE ■SURFACE-MOUNTINGD2PAK(TO-263) POWERPACKAGEINTUBE(NOSUFFIX)OR INTAPE&REEL(SUFFIX“T4”) DES