STB47N60DM6AG中文资料汽车级N沟道600 V、70 mOhm典型值、36 A MDmesh DM6功率MOSFET，D2PAK封装数据手册ST规格书

描述 Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

特性 Features

• AEC-Q101 qualified
• Fast-recovery body diode
• Lower R
DS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected

简介

STB47N60DM6AG属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的STB47N60DM6AG晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。