Automotive-grade N-channel 600 V, 70 m typ., 36 A MDmesh™ DM6 Power MOSFET in a D2PAK package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is

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汽车级N沟道600 V、70 mOhm典型值、36 A MDmesh DM6功率MOSFET，D2PAK封装

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • AEC-Q101 qualified \n• Fast-recovery body diode \n• Lower R\nDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：AUTOMOTIVE-GRADE N-CHANNEL 600 V

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Automotive-grade N-channel 600 V, 70 m廓 typ., 36 A MDmesh DM6 Power MOSFET in an HU3PAK package

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Automotive-grade N-channel 600 V, 70 m typ., 36 A MDmeshTM DM6 Power MOSFET in an I²PAK package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is

文件：452.26 Kbytes 页数：13 Pages

STMICROELECTRONICS

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