N沟道600 V、0.085 Ohm典型值、34 A MDmesh DM2功率MOSFET，D2PAK封装

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shif • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

ST

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丝印：43N60DM2；Package：D2PAK；N-channel 600 V, 0.085 廓 typ., 34 A MDmesh??DM2 Power MOSFET in a D짼PAK package

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STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 34A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 93mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel 600 V, 0.085 廓 typ., 34 A MDmesh??DM2 Power MOSFET in a TO-220FP package

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STMICROELECTRONICS

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Extremely high dv/dt ruggedness

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STMICROELECTRONICS

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