STF43N60DM2

N沟道600 V、0.085 Ohm典型值、34 A MDmesh DM2功率MOSFET，TO-220FP封装; • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.\n\n

STF43N60DM2

Marking：43N60DM2；Package：TO-220FP；N-channel 600 V, 0.085 廓 typ., 34 A MDmesh??DM2 Power MOSFET in a TO-220FP package

STB43N60DM2

N-channel600V,0.085廓typ.,34AMDmesh??DM2PowerMOSFETinaD짼PAKpackage

STP43N60DM2

Extremelyhighdv/dtruggedness

STW43N60DM2

N-channel600V,0.085廓typ.,34AMDmesh??DM2PowerMOSFETinaTO-247package

Description ThishighvoltageN-channelPowerMOSFETis partoftheMDmesh™DM2fastrecoverydiode series.Itoffersverylowrecoverycharge(Qrr) andtime(trr)combinedwithlowRDS(on),rendering itsuitableforthemostdemandinghighefficiency convertersandidealforbridgetopologi