STB18N60DM2

N沟道600 V、0.260 Ohm典型值、12 A MDmesh DM2功率MOSFET，D2PAK封装; • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.\n\n

STB18N60DM2

Fast-recovery body diode

STF18N60DM2

N-channel600V,0.260typ.,12AMDmeshDM2PowerMOSFETinaTO-220FPpackage

Features •Fast-recoverybodydiode •Extremelylowgatechargeandinputcapacitance •Lowon-resistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM2fastrecovery diodeseries.

STP18N60DM2

Extremelyhighdv/dtruggedness

STW18N60DM2

Extremelyhighdv/dtruggedness