N沟道600 V、0.260 Ohm典型值、12 A MDmesh DM2功率MOSFET，D2PAK封装

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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Fast-recovery body diode

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N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

文件：456.47 Kbytes 页数：12 Pages

STMICROELECTRONICS

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Extremely high dv/dt ruggedness

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STMICROELECTRONICS

意法半导体

Extremely high dv/dt ruggedness

文件：711.38 Kbytes 页数：12 Pages

STMICROELECTRONICS

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