STW18N60DM2

N沟道600 V、0.260 Ohm典型值、12 A MDmesh DM2功率MOSFET，TO-247封装; • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.\n\n

STW18N60DM2

Extremely high dv/dt ruggedness

STB18N60DM2

Fast-recoverybodydiode

STF18N60DM2

N-channel600V,0.260typ.,12AMDmeshDM2PowerMOSFETinaTO-220FPpackage

Features •Fast-recoverybodydiode •Extremelylowgatechargeandinputcapacitance •Lowon-resistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM2fastrecovery diodeseries.

STP18N60DM2

Extremelyhighdv/dtruggedness