N沟道600 V、0.260 Ohm典型值、12 A MDmesh DM2功率MOSFET，TO-247封装

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shif • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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Extremely high dv/dt ruggedness

文件：711.38 Kbytes 页数：12 Pages

STMICROELECTRONICS

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Fast-recovery body diode

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STMICROELECTRONICS

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N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

文件：456.47 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Extremely high dv/dt ruggedness

文件：716.6 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体