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STB15NM60ND中文资料N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in D2PAK package数据手册ST规格书
STB15NM60ND规格书详情
描述 Description
The FDmesh II series belongs to the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.
特性 Features
The worldwide best R
DS(on)* area amongst the fast recovery diode devices
Low input capacitance and gate charge
100% avalanche tested
Extremely high dv/dt and avalanche capabilities
Low gate input resistance
技术参数
- 型号：
STB15NM60ND
- 功能描述：
MOSFET N-channel 600V, 14A FDMesh II
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3285 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
17+ |
TO-263 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
STMicroelectronics |
23+ |
TO263 |
50000 |
只做原装正品 |
询价 | ||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
ST |
23+ |
TO-263 |
2550 |
原厂原装正品 |
询价 | ||
ST |
17+ |
D2PAK |
6200 |
询价 | |||
ST |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST |
24+ |
TO-263 |
7500 |
询价 | |||
ST |
24+ |
TO263-2 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
询价 |
