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STB15NM60ND数据手册ST中文资料规格书
STB15NM60ND规格书详情
描述 Description
The FDmesh II series belongs to the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.
特性 Features
The worldwide best R
DS(on)* area amongst the fast recovery diode devices
Low input capacitance and gate charge
100% avalanche tested
Extremely high dv/dt and avalanche capabilities
Low gate input resistance
技术参数
- 型号:
STB15NM60ND
- 功能描述:
MOSFET N-channel 600V, 14A FDMesh II
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
23+ |
TO263 |
50000 |
只做原装正品 |
询价 | ||
ST |
2511 |
D2PAK |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST/意法 |
24+ |
NA/ |
3285 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
23+ |
TO263-2 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ADI |
23+ |
TO263-2 |
8000 |
只做原装现货 |
询价 | ||
ST/意法 |
2022+ |
D2PAK |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
ST |
24+ |
TO263 |
39500 |
进口原装现货 支持实单价优 |
询价 | ||
ST |
24+ |
TO-263 |
56800 |
特价现货,下单送华为手机.香港 日本 新加坡 |
询价 | ||
ST |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
STM |
23+ |
TO263 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 |