N-CHANNEL 100V - 0.009 W - 120A D2PAK/TO-220 STripFET II POWER MOSFET

Description These devices are N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom

文件：393.94 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-channel 100V - 0.009OHM - 110A - TO-247 - TO-220 - D2PAK STripFET2 Power MOSFET

Description These devices are N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom

文件：376.56 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 100 V, 0.009 ohm, 110 A STripFET II Power MOSFET

Description These devices are N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom

文件：946.25 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N-Channel 100-V (D-S) MOSFET

文件：969.7 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-channel 100 V, 0.009 廓, 110 A STripFET??II Power MOSFET in TO-247, TO-220, D짼PAK, TO-220FP

文件：946.25 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N沟道100 V、9 mOhm典型值、110 A STripFET II功率MOSFET，D2PAK封装

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and c • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

意法半导体