N沟道600 V、0.65 Ohm典型值、10 A有齐纳管保护的SuperMESH功率MOSFET，D2PAK封装

These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high • Extremely high dv/dt capability \n• 100% avalanche tested \n• Gate charge minimized \n• Zener-protected;

ST

意法半导体

N-channel 600 V, 0.65 Ohm typ., 10 A SuperMESH Power MOSFET in a D2PAK package

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/d • 100% avalanche tested \n• Extremely high dv/dt capability \n• Gate charge minimized \n• Zener-protected;

ST

意法半导体