GaN HEMT 50V, 30W,4.0-6.0GHz RF Power Transistor

Description The STAV58030J2 is a single ended 30watt, GaN HEMT, ideal for 5G NR applications within 4.0-6.0GHz It is an internally matched transistor capable of supporting CW, pulse or any modulated signal. There is no guarantee of performance when this part is used outside of stated frequencie

文件：1.13302 Mbytes 页数：6 Pages

INNOGRATION

远创达

GaN HEMT 50V, 30W,4.0-6.0GHz RF Power Transistor

Description The STAV58030J2 is a single ended 30watt, GaN HEMT, ideal for 5G NR applications within 4.0-6.0GHz It is an internally matched transistor capable of supporting CW, pulse or any modulated signal. There is no guarantee of performance when this part is used outside of stated frequencie

文件：1.13302 Mbytes 页数：6 Pages

INNOGRATION

远创达

TO-263

ST/意法

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TO-263

ST

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TO-263

ST

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