GaN HEMT 50V, 50W,5.0-6.0GHz RF Power Transistor

Description The STAV58050J2 is a single ended 50watt, GaN HEMT, ideal for 5G NR applications within 5.0-6.0GHz It is an internally matched transistor capable of supporting pulse CW or any modulated signal. There is no guarantee of performance when this part is used outside of stated frequencies

文件：1.103 Mbytes 页数：5 Pages

INNOGRATION

远创达科技

GaN HEMT 50V, 50W,5.0-6.0GHz RF Power Transistor

Description The STAV58050J2 is a single ended 50watt, GaN HEMT, ideal for 5G NR applications within 5.0-6.0GHz It is an internally matched transistor capable of supporting pulse CW or any modulated signal. There is no guarantee of performance when this part is used outside of stated frequencies

文件：1.103 Mbytes 页数：5 Pages

INNOGRATION

远创达科技

GaN HEMT 50V, 50W,5.0-6.0GHz RF Power Transistor

Description The STAV58050J2 is a single ended 50watt, GaN HEMT, ideal for 5G NR applications within 5.0-6.0GHz It is an internally matched transistor capable of supporting pulse CW or any modulated signal. There is no guarantee of performance when this part is used outside of stated frequencies

文件：1.103 Mbytes 页数：5 Pages

INNOGRATION

远创达科技

GaN HEMT 50V, 50W,5.0-6.0GHz RF Power Transistor

Description The STAV58050J2 is a single ended 50watt, GaN HEMT, ideal for 5G NR applications within 5.0-6.0GHz It is an internally matched transistor capable of supporting pulse CW or any modulated signal. There is no guarantee of performance when this part is used outside of stated frequencies

文件：1.103 Mbytes 页数：5 Pages

INNOGRATION

远创达科技

GaN HEMT 50V, 50W,5.0-6.0GHz RF Power Transistor

Description The STAV58050J2 is a single ended 50watt, GaN HEMT, ideal for 5G NR applications within 5.0-6.0GHz It is an internally matched transistor capable of supporting pulse CW or any modulated signal. There is no guarantee of performance when this part is used outside of stated frequencies

文件：1.103 Mbytes 页数：5 Pages

INNOGRATION

远创达科技

GaN HEMT 50V, 50W,5.0-6.0GHz RF Power Transistor

Description The STAV58050J2 is a single ended 50watt, GaN HEMT, ideal for 5G NR applications within 5.0-6.0GHz It is an internally matched transistor capable of supporting pulse CW or any modulated signal. There is no guarantee of performance when this part is used outside of stated frequencies

文件：1.103 Mbytes 页数：5 Pages

INNOGRATION

远创达科技

GaN HEMT 50V, 50W,5.0-6.0GHz RF Power Transistor

Description The STAV58050J2 is a single ended 50watt, GaN HEMT, ideal for 5G NR applications within 5.0-6.0GHz It is an internally matched transistor capable of supporting pulse CW or any modulated signal. There is no guarantee of performance when this part is used outside of stated frequencies

文件：1.103 Mbytes 页数：5 Pages

INNOGRATION

远创达科技

GaN HEMT 50V, 50W,5.0-6.0GHz RF Power Transistor

Description The STAV58050J2 is a single ended 50watt, GaN HEMT, ideal for 5G NR applications within 5.0-6.0GHz It is an internally matched transistor capable of supporting pulse CW or any modulated signal. There is no guarantee of performance when this part is used outside of stated frequencies

文件：1.103 Mbytes 页数：5 Pages

INNOGRATION

远创达科技