STAC9200数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The STAC9200 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband applications in the HF to 1300 MHz frequency range. The STAC9200 benefits from the latest generation of efficient STAC® package technology.

特性 Features

• Improved ruggedness: V(BR)DSS> 80 V
• Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10%
• POUT = 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz
• In compliance with the 2002/95/EC European directive
• ST air-cavity STAC® packaging technology

简介

STAC9200属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的STAC9200晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。