350 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internal input matching for ease of use • Large positive and negative gate/source voltage range for improved class C operation • In compliance with the European Directive 2002/95/EC Description The STAC12

文件：330.56 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

350 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor

The STAC1214-350 is a 50 V common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for L-band radar applications.\n 主要特性\nHigh efficiency and linear gain operationsIntegrated ESD protectionInternal input matching for ease of useLarge positive and negative gate • High efficiency and linear gain operations\n• Integrated ESD protection\n• Internal input matching for ease of use\n• Large positive and negative gate/source voltage range for improved class C operation\n• In compliance with the European Directive 2002/95/EC;

ST

意法半导体

SIGMATEL
QFP-48

SIGMATEL

矽玛特

上传：深圳市华来深电子有限公司

SIGMATEL
QFP48

SIGMATEL

矽玛特

上传：深圳市昌和盛利电子有限公司

ST
A/N

ST

上传：深圳诚思涵科技有限公司