Excellent thermal stability

Description The STAC2932F is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2932F benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC™. Featur

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STMICROELECTRONICS

意法半导体

300W - 50V HF/VHF DMOS in STAC244 Flangeless package

The STAC2932F is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz.\n The STAC2932F benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC™. • Gold metallization\n• Excellent thermal stability\n• Common source push-pull configuration• POUT= 300 W min. with 20 dB gain @ 175 MHz\n• In compliance with the 2002/95/EC European directive\n• ST air cavity packaging technology - STAC™package;

ST

意法半导体

Package：STAC244F；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS RF PWR N-CH STAC244F

STMICROELECTRONICS

意法半导体

Package：STAC244F；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS RF PWR N-CH 300W STAC244B

STMICROELECTRONICS

意法半导体