丝印：ST6；Package：SOT-23-6L；30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@4.0A

文件：385.15 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：ST6；Package：SOT-23-6L；30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@4.0A

文件：385.15 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：ST6；Package：SOT-23-6L；30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@4.0A

文件：444.52 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：600K；Package：SOT-32；LOW VOLTAGE NPN POWER TRANSISTOR

Description The ST631K is manufactured by low voltage Epitaxial Base technology and it is housed in SOT-32 plastic package. The complementary PNP type is ST600K. Features ■ LOW SATURATION VOLTAGE Applications ■ SCANNING VELOCITY MODULATION IN CRT DISPLAYS ■ MEDIUM POWER LINEAR AND SWITCH

文件：56.67 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

CE conformity

FEATURES J J I4 « CE conformity * Built to meet European Standard BS EN 60335-2-45 ! * Full power range from 12 to 50 watt * Wide choice of input voltages * “Thermally balanced” fixed setting and “In Handle” adjustable temperature models * Wide range of soldering and desoldering-b

文件：598.09 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

LOW VOLTAGE PNP POWER TRANSISTOR

Description The ST631K is manufactured by low voltage Epitaxial Base technology and it is housed in SOT-32 plastic package. The complementary PNP type is ST600K. Features ■ LOW SATURATION VOLTAGE Applications ■ SCANNING VELOCITY MODULATION IN CRT DISPLAYS ■ MEDIUM POWER LINEAR AND SWITCHING

文件：56.11 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Silicon Dual Power Rectifier

Silicon Dual Power Rectifier ● Glass passivated die ● Glass to metal seal construction ● VRRM 200 to 1000V ● 400 A Surge Rating ● Available as common anode, common cathode, or doubleer

文件：161.35 Kbytes 页数：3 Pages

Microsemi

美高森美

SCHOTTKY RECTIFIER

Features  150 'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technol

文件：366.58 Kbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

文件：567.89 Kbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

Silicon Dual Power Rectifier

Silicon Dual Power Rectifier ● Glass passivated die ● Glass to metal seal construction ● VRRM 200 to 1000V ● 400 A Surge Rating ● Available as common anode, common cathode, or doubleer

文件：161.35 Kbytes 页数：3 Pages

Microsemi

美高森美