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STB42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB42N65M5	文件：313.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STF42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF42N65M5	文件：310.7 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES •DrainCurrent–ID=33A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingappl	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STI42N65M5	文件：357.93 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES •DrainCurrent–ID=33A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingappl	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STI42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STI42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STI42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STL42N65M5	文件：686.55 Kbytes Page：14 Pages	N-channel650V,0.070廓,34AMDmesh??VPowerMOSFETinPowerFLAT??8x8HVpackage Description ThisdeviceisanN-channelMDmesh™VPower MOSFETbasedonaninnovativeproprietary verticalprocesstechnology,whichiscombined withSTMicroelectronics’well-known PowerMESH™horizontallayoutstructure.The resultingproducthasextremelylowonresistance,whichisunmatche	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP42N65M5	文件：319.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STW42N65M5	文件：436.01 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STW42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS

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供应商	型号	品牌	批号	封装	库存	备注	价格
中科航电（深圳）电子集团有限公司	ST42N65M5	ST		TO-247	93480	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
艾睿国际（香港）有限公司	ST-42TA	COPAL	2021+	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
贸泽芯城（深圳）电子科技有限公司	ST-42TA101	COPAL	21+	5X5-100R	15000	原厂VIP渠道,亚太地区一级代理商,可提供更多数量!	询价
深圳市赛美科科技有限公司	ST-42TA105	COPAL		NA	12530	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市宝芯创电子有限公司	ST-42TA10K	COPAL	09+	SMD	500	原厂原装仓库现货,欢迎咨询	询价
深圳市粤骏腾电子科技有限公司	ST-42TA10K	COPAL	23+	SMD	1200	全新原装数量均有多电话咨询	询价
深圳市中利达电子科技有限公司	ST-42TA10K	COPAL	22+	SMD	1000000	电感只做原装现货提供一站式配套供货中利达	询价
深圳市惊羽科技有限公司	ST-42TA10K	COPAL	24+25+/26+27+	车规-被动器件	96800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳兆威电子有限公司	ST-42TA302	COPAL	22+	55	90000	假一赔十原装现货	询价
深圳市拓亿芯电子有限公司	ST-42TA500	COPAL	23+	SMD	9800	全新原装现货,假一赔十	询价

更多ST42N65M5供应商更新时间2024-6-3 16:10:00

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