N Channel Enhancement Mode MOSFET

DESCRIPTION The ST3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applic

文件：352.35 Kbytes 页数：6 Pages

STANSON

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N Channel Enhancement Mode MOSFET

Stanson

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：493.64 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N Channel Enhancement Mode MOSFET

DESCRIPTION The ST3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applic

文件：352.35 Kbytes 页数：6 Pages

STANSON

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The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

DESCRIPTION The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app

文件：547.99 Kbytes 页数：6 Pages

STANSON

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：493.56 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N Channel Enhancement Mode MOSFET

文件：402.41 Kbytes 页数：6 Pages

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Tranch MOSFET

Stanson

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Tranch MOSFET

Stanson

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