P Channel Enhancement Mode MOSFET

DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applic

文件：200.15 Kbytes 页数：6 Pages

STANSON

司坦森

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：490.2 Kbytes 页数：9 Pages

VBSEMI

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P Channel Enhancement Mode MOSFET

Stanson

司坦森

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：491.73 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P Channel Enhancement Mode MOSFET

DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage a

文件：174.86 Kbytes 页数：6 Pages

STANSON

司坦森

P Channel Enhancement Mode MOSFET

DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applic

文件：200.15 Kbytes 页数：6 Pages

STANSON

司坦森

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：491.22 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：490.78 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.

DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app

文件：212.27 Kbytes 页数：6 Pages

STANSON

司坦森

P Channel Enhancement Mode MOSFET

文件：174.86 Kbytes 页数：6 Pages

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