ST3406SRG

ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

DESCRIPTION ST3406SRGistheN-Channellogicenhancementmodepowerfieldeffecttransistorwhichisproducedusinghighcelldensity,DMOStrenchtechnology.Thishighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuitedforlowvoltage

ST3406SRG

N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

3406

DREHZAHLMESSER

3406A

200V-1,000VThreePhaseBridge

200V-1,000VThreePhaseBridge 18.0A-20.0AForwardCurrent 70ns-3000nsRecoveryTime

3406B

200V-1,000VThreePhaseBridge18.0A-20.0AForwardCurrent70ns-3000nsRecoveryTime

200V-1,000VThreePhaseBridge 18.0A-20.0AForwardCurrent 70ns-3000nsRecoveryTime

3406B

200V-1,000VThreePhaseBridge

200V-1,000VThreePhaseBridge 18.0A-20.0AForwardCurrent 70ns-3000nsRecoveryTime

3406D

PicoScope®3000SeriesPCoscilloscopesandMSOs

Features Upto200MHzanalogbandwidth Deepbuffermemoryupto512MS MSOmodelswith16digitalchannels 2or4analogchannels 1GS/sreal-timesampling Fastwaveformupdates Built-inarbitrarywaveformgenerator USB3.0connectedandpowered

3406D-MSO

PicoScope®3000SeriesPCoscilloscopesandMSOs

Features Upto200MHzanalogbandwidth Deepbuffermemoryupto512MS MSOmodelswith16digitalchannels 2or4analogchannels 1GS/sreal-timesampling Fastwaveformupdates Built-inarbitrarywaveformgenerator USB3.0connectedandpowered

3406FA

200V-1,000VThreePhaseBridge

200V-1,000VThreePhaseBridge 18.0A-20.0AForwardCurrent 70ns-3000nsRecoveryTime

3406FB

200V-1,000VThreePhaseBridge

200V-1,000VThreePhaseBridge 18.0A-20.0AForwardCurrent 70ns-3000nsRecoveryTime

3406FB

200V-1,000VThreePhaseBridge18.0A-20.0AForwardCurrent70ns-3000nsRecoveryTime

200V-1,000VThreePhaseBridge 18.0A-20.0AForwardCurrent 70ns-3000nsRecoveryTime

3406UFA

200V-1,000VThreePhaseBridge

200V-1,000VThreePhaseBridge 18.0A-20.0AForwardCurrent 70ns-3000nsRecoveryTime

3406UFB

200V-1,000VThreePhaseBridge18.0A-20.0AForwardCurrent70ns-3000nsRecoveryTime

200V-1,000VThreePhaseBridge 18.0A-20.0AForwardCurrent 70ns-3000nsRecoveryTime

3406UFB

200V-1,000VThreePhaseBridge

200V-1,000VThreePhaseBridge 18.0A-20.0AForwardCurrent 70ns-3000nsRecoveryTime

AM3406

MOSFET30VN-CHANNELENHANCEMENTMODE

DESCRIPTION AM3406istheN-ChannelenhancementmodepowerfieldeffecttransistorsareusingtrenchDMOStechnology.Thisadvancedtrenchtechnologydevicesarewellsuitedforhighefficiencyfastswitchingapplications,lowin-linepowerlossareneededinsmalloutlinesurfacemountpackage.

AM3406A

MOSFET30VN-CHANNELENHANCEMENT-MODE

DESCRIPTION TheAM3406AisavailableinSOT-23Spackage. FEATURES VDS=30V RDS(ON),VGS=4.5V,IDS@5A=52mΩ RDS(ON),VGS=10V,IDS@6A=38mΩ AvailableinSOT-23SPackage APPLICATION Highdensitycelldesignforultralowon-resistance Advancedtrenchprocesstechnology High

AM3406N

N-Channel30V(D-S)MOSFET

AMS3406

SuperhighdensitycelldesignforextremelylowRDS(ON)

DESCRIPTION AMS3406istheN-Channellogicenhancementmodepowerfieldeffecttransistorwhichisproducedusinghighcelldensity,DMOStrenchtechnology.Thishighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuitedforlowvoltageappl

AO3406

30VN-ChannelMOSFET

AO3406

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO3406usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO3406isPb-free(meetsROHS&Sony259specifications).AO3406LisaGreenProductorder