P Channel Enhancement Mode MOSFET

DESCRIPTION The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low vo

文件：138.9 Kbytes 页数：7 Pages

STANSON

司坦森

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：482.56 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P Channel Enhancement Mode MOSFET -3.4A

DESCRIPTION\nThe ST3413 is the P-Channel logic enhancement mode power field effect transistors are\nproduced using high cell density, DMOS trench technology.\nThis high density process is especially tailored to minimize on-state resistance.\nThese devices are particularly suited for low voltage appl

Stanson

司坦森

P Channel Enhancement Mode MOSFET

DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

文件：267.88 Kbytes 页数：7 Pages

STANSON

司坦森

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：482.83 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 20-V (D-S) MOSFET

文件：1.03845 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P Channel Enhancement Mode MOSFET

文件：267.88 Kbytes 页数：7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Tranch MOSFET

Stanson

司坦森