ST3406规格书市场行情司坦森VBSEMI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
ST3406	文件：493.03 Kbytes Page：9 Pages	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter 文件：493.03 Kbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
ST3406	文件：237.26 Kbytes Page：6 Pages	N Channel Enhancement Mode MOSFET DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app 文件：237.26 Kbytes 页数：6 Pages	STANSON 司坦森	STANSON
ST3406	文件：300 bytes Page：1 Pages	Tranch MOSFET	Stanson 司坦森	Stanson
ST3406S23G	文件：493.34 Kbytes Page：9 Pages	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter 文件：493.34 Kbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
ST3406S23RG	文件：493.41 Kbytes Page：9 Pages	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter 文件：493.41 Kbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
ST3406S23RG	文件：237.26 Kbytes Page：6 Pages	N Channel Enhancement Mode MOSFET DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app 文件：237.26 Kbytes 页数：6 Pages	STANSON 司坦森	STANSON
ST3406SRG	文件：325.94 Kbytes Page：6 Pages	ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. DESCRIPTION ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage 文件：325.94 Kbytes 页数：6 Pages	STANSON 司坦森	STANSON
ST3406SRG	文件：493.28 Kbytes Page：9 Pages	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter 文件：493.28 Kbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
ST3406S23RG	文件：300 bytes Page：1 Pages	N-Channel Enhancement Mode MOSFET 5.4A DESCRIPTION\nST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applica	Stanson 司坦森	Stanson
ST3406SRG	文件：300 bytes Page：1 Pages	Tranch MOSFET	Stanson 司坦森	Stanson

详细参数

型号：
ST3406
制造商：
STANSON
制造商全称：
STANSON
功能描述：
N Channel Enhancement Mode MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	ST3406	STANSON/司坦森	25+	SOT-23	20300	STANSON/司坦森原装特价ST3406即刻询购立享优惠#长期有货	询价
深圳市坤融电子科技有限公司	ST3406	STANSON	2025+	SOT-23-3L	5000	原装进口,免费送样品!	询价
深圳市福田区绿盛电子商行	ST3406	SEMTRON	2015+	SOT23-3	29898	专业代理MOS管,型号齐全,公司优势产品	询价
深圳市粤骏腾电子科技有限公司	ST3406	STANSON	24+	SOT23-3	362652	专业代理MOS管有优势	询价
深圳市澳亿芯电子科技有限公司	ST3406		25+	SOT23-3	1	普通	询价
深圳市威尔健半导体有限公司	ST3406	STANSON	23+	SOT-23-3L	50000	全新原装正品现货,支持订货	询价
深圳市河锋鑫科技有限公司	ST3406	STANSONTECH	2022+	SOT-23	40000	原厂代理终端免费提供样品	询价
深圳市明嘉莱科技有限公司	ST3406	STANSON/司坦森	24+	SOT23-3	880000	明嘉莱只做原装正品现货	询价
深圳市博中泰实业有限公司	ST3406	STANSON/司坦森	24+	SOT-23-3L	60000	全新原装现货	询价
深圳市腾亿芯科技有限公司	ST3406	ST	25+	SOT23-3	16900	原装，请咨询	询价

更多ST3406供应商更新时间2026-1-28 14:14:00

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