N Channel Enhancement Mode MOSFET

DESCRIPTION ST3402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appli

文件：386.91 Kbytes 页数：6 Pages

STANSON

司坦森

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：481.81 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N Channel Enhancement Mode MOSFET

Stanson

司坦森

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：482.66 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N Channel Enhancement Mode MOSFET

DESCRIPTION ST3402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appli

文件：386.91 Kbytes 页数：6 Pages

STANSON

司坦森