NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin c

文件：128.889 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for audio frequency low-power amplifier applications.

文件：214.78 Kbytes 页数：1 Pages

DCCOM

道全

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ: 150℃

文件：59.47 Kbytes 页数：1 Pages

TEL

Silicon PNP Epitaxial Type (PCT process)

文件：319.24 Kbytes 页数：3 Pages

TOSHIBA

东芝