NPN Silicon Epitaxial Power Transistor

NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain.

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SEMTECH_ELEC

先之科半导体

SILICON POWER TRANSISTOR

FEATURES • Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A) • Large power dissipation TO-126 type power transistor PT = 1.3 W (@Ta = 25°C), 20 W (@Tc = 25°C) • Complementary transistor: 2SB1151

文件：237.21 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB1151 ·Low saturation voltage ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC converter ·Driver of solenoid or motor

文件：112.48 Kbytes 页数：3 Pages

SAVANTIC

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT ■ FEATURES * High Power Dissipation * Complementary to 2SB1151

文件：102.58 Kbytes 页数：3 Pages

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