STB1277

Marking：STB1277；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Audiopoweramplifier Highcurrentapplication Highcurrent:IC=-2A ComplementarypairwithSTD1862

STB1277-TA

Marking：STB1277；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Audiopoweramplifier Highcurrentapplication Highcurrent:IC=-2A ComplementarypairwithSTD1862

STC128

Marking：STC128；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES LowSaturationMediumCurrentApplication ExtremelyLowCollectorSaturationVoltage SuitableforLowVoltageLargeCurrentDrivers HighDCCurrentGainandLargeCurrentCapability

STC128-TA

Marking：STC128；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES LowSaturationMediumCurrentApplication ExtremelyLowCollectorSaturationVoltage SuitableforLowVoltageLargeCurrentDrivers HighDCCurrentGainandLargeCurrentCapability

STD10100S-CA-B

Marking：STD10100S；Package：TO-220；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS Highfrequencyswitch powersupply Freewheelingdiodes, polarityprotection applications FEATURES Commoncathodestructure Lowpowerloss,highefficiency HighOperatingJunction Temperature TrenchMOSSchottkytechnology， Highreliability RoHSproduct

STD10100S-F1-B

Marking：STD10100S；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS Highfrequencyswitch powersupply Freewheelingdiodes, polarityprotection applications FEATURES Commoncathodestructure Lowpowerloss,highefficiency HighOperatingJunction Temperature TrenchMOSSchottkytechnology， Highreliability RoHSproduct

STD10100S-FA-B

Marking：STD10100S；Package：TO-220HF；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS Highfrequencyswitch powersupply Freewheelingdiodes, polarityprotection applications FEATURES Commoncathodestructure Lowpowerloss,highefficiency HighOperatingJunction Temperature TrenchMOSSchottkytechnology， Highreliability RoHSproduct

STD10100S-S-B

Marking：STD10100S；Package：TO-263；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS Highfrequencyswitch powersupply Freewheelingdiodes, polarityprotection applications FEATURES Commoncathodestructure Lowpowerloss,highefficiency HighOperatingJunction Temperature TrenchMOSSchottkytechnology， Highreliability RoHSproduct

STD35P6LLF6

Marking：STD35PLLF6；Package：TO-252；-60V P-Channel MOSFET

Features Verylowon-resistance Verylowgatecharge Highavalancheruggedness Lowgatedrivepowerloss VDS(V)=-60V RDS(ON)

STL2545NDE-A

Marking：STL2545N；Package：R-6-S1；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS Lowvoltage,high frequencyrectifier Freewheelingcircuitand protectioncircuitoflowvoltage solarcelljunctionboxasa bypassdiode FEATURES Lowpowerloss,highefficiency HighOperatingJunction Temperature Highreliability RoHSproduct