首页 >SSW2N60AMOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=3.2Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■CHOPPERREGULATORS,CONVERTERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=3.2Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■CHOPPERREGULATORS,CONVERTERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
2A,600VNChannelMOSFET GENERALDESCRIPTION SVD2N60TisanN-channelenhancementmodepowerMOSfieldeffecttransistorwhichisproducedusingSilanproprietarySRin™structureDMOStechnology.Theimprovedplanarstripecellandtheimprovedguardingringterminalhavebeenespeciallytailoredtomini | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
ThispowerMOSFETisproducedinCHMCwithadvancedVDMOStechnologyofSAMWIN. | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
N-channelMOSFET(TO-251,TO-252) GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelMOSFET(TO-220F,TO-220) GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER |
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