SSW2N60B

600V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

SSW2N60B

N-Channel 650 V (D-S) MOSFET

STP2N60

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRDS(on)=3.2Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■CHOPPERREGULATORS,CONVERTERS

STP2N60FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRDS(on)=3.2Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■CHOPPERREGULATORS,CONVERTERS

SVD2N60T

2A,600VNChannelMOSFET

GENERALDESCRIPTION SVD2N60TisanN-channelenhancementmodepowerMOSfieldeffecttransistorwhichisproducedusingSilanproprietarySRin™structureDMOStechnology.Theimprovedplanarstripecellandtheimprovedguardingringterminalhavebeenespeciallytailoredtomini

SVF2N60D

N-ChannelMOSFETusesadvancedtrenchtechnology

SVF2N60D

N-Channel650V(D-S)MOSFET

SW2N60

ThispowerMOSFETisproducedinCHMCwithadvancedVDMOStechnologyofSAMWIN.

SW2N60

N-channelMOSFET(TO-251,TO-252)

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi

SW2N60

N-channelMOSFET(TO-220F,TO-220)

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi