N-CHANNEL POWER MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 500V ■ Lower RDS(ON) : 4.046 Ω(Typ.)

文件：265.7 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

520V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：634.92 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：637.03 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

丝印：10N20；Package：TO-263；N-Ch Enhancement Mode Power MOSFET

文件：672.29 Kbytes 页数：4 Pages

SECOS

喜可士

1.0 AMP SURFACE MOUNT SUPER FAST RECTIFIERS

文件：67.31 Kbytes 页数：2 Pages

GWSEMI

唯圣电子

丝印：SU3；Package：SOD-323；SURFACE MOUNT SCHOTTKY RECTIFIERS

文件：480.28 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：14L；Package：SOD-123；SURFACE MOUNT SCHOTTKY RECTIFIERS

文件：434.03 Kbytes 页数：3 Pages

YFWDIODE

佑风微

1.0 AMP SURFACE MOUNT SUPER FAST RECTIFIERS

文件：67.31 Kbytes 页数：2 Pages

GWSEMI

唯圣电子

isc N-Channel MOSFET Transistor

文件：345.35 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：346.19 Kbytes 页数：2 Pages

ISC

无锡固电